Pure Sine Wave Inverter Pcb Schematic and Components Name

The above diagram clearly shows the component in my circuit. I have not used the opt coupler circuit instead  I have used IR 2112 MOSFET Driver Integrated circuit because in my country IR 2110 MOSFET driver Integrated circuit has very low quality and that burn again and again. I have used the IR 2110 integrated circuit first but that was low quality so it burns again and again. As Sinusoidal pulse width modulation generated by microcontroller has the magnitude of 5 volt that is insufficient to drive the MOSFET DRIVER circuit. So that is why we need the Driver circuit. I used four  MOSFET IRF 840 for the bridge circuit.IRF 840 Specifications are 8 amperes and 500 volts, nanosecond switching speed is N channel enhancement mode silicon gate power effect transistor. For bootstrap function in the high side of the MOSFET bridge, I have used two capacitors on both sides of the driver circuit 22 microfarad capacitor along 100 nano-farad capacitors. This combination of the capacitor together drives the High side bridge circuit. The component used in the above schematic are1. 
MOSFET DRIVER IC IR21102.
 Q1 IRF 8403.
 Q2 IRF 8404.
 Q3 IRF 8405.
 Q4 IRF 8406. 
C1 22uf7. 
C2 100nf8.  
C3 22uf9.
C4 100nf10 
C5 22uf
11 C6 10uf
12 C7 22uf
13 C8 100uf
14 R1 10R
15 R2 1OR
16 R3 1K
17 R4 1K
18 R5 10R1
9 R6 10R
20 R7 1K
21 R8 1K
22 U1 IR2110
23 U2 IR2110
24 D1 IN4148
25 D2 IN4148
26 D3 IN4148
27 D4 1N4148                         

  Diode D1 to D4 are high-speed Diode. its max switching speed is 4 nanoseconds. Its continuous reverse max voltage is 100 volt.